NE5531079A Datasheet 7.5v Operation Silicon Rf Power Ldmos Fet

Manufacturer: Renesas

Overview: DATA SHEET SILICON POWER MOS FET NE5531079A 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION.

Datasheet Details

Part number	NE5531079A
Manufacturer	Renesas
File Size	154.22 KB
Description	7.5V OPERATION SILICON RF POWER LDMOS FET
Datasheet	NE5531079A-Renesas.pdf

General Description

The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems.

Dies are manufactured using our NEWMOS-M1 technology and housed in a surface mount package.

This device can deliver 40.0 dBm output power with 68% power added efficiency at 460 MHz under the 7.5 V supply voltage.

Key Features

High output power : Pout = 40.0 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm).
High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm).
High linear gain : GL = 20.5 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm).
Surface mount package : 5.7 × 5.7 × 1.1 mm MAX.
Single supply : VDS = 7.5 V MAX.

NE5531079A Distributor

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