Datasheet4U Logo Datasheet4U.com

NE5531079A - SILICON POWER MOS FET

General Description

The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems.

Die are manufactured using our NEWMOS-M1 technology and housed in a surface mount package.

Key Features

  • High output power.
  • High linear gain.
  • Surface mount package.
  • Single supply : Pout = 40.0 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm) : GL = 20.5 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm) : 5.7  5.7  1.1 mm MAX. : VDS = 7.5 V MAX.
  • High power added efficiency : add = 68% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm).

📥 Download Datasheet

Datasheet Details

Part number NE5531079A
Manufacturer California Eastern Labs
File Size 382.84 KB
Description SILICON POWER MOS FET
Datasheet download datasheet NE5531079A Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NE5531079A 7.5V OPERATION SILICON RF POWER LDMOS FET Renesas
NE5532 Internally-compensated dual low noise operational amplifier Philips
NE5532 Dual Operational Amplifier Fairchild Semiconductor
NE5532 Internally Compensated Dual Low Noise Operational Amplifier ON Semiconductor
NE5532 Dual Low-Noise Operational Amplifiers Texas Instruments

Other Datasheets by California Eastern Labs

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SILICON POWER MOS FET NE5531079A 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems. Die are manufactured using our NEWMOS-M1 technology and housed in a surface mount package. This device can deliver 40.0 dBm output power with 68% power added efficiency at 460 MHz with 7.5 V supply voltage. FEATURES • High output power • High linear gain • Surface mount package • Single supply : Pout = 40.0 dBm TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm) : GL = 20.5 dB TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm) : 5.7  5.7  1.1 mm MAX. : VDS = 7.5 V MAX.