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NE664M04 - NPN SILICON RF TRANSISTOR

Features

  • Ideal for 460 MHz to 2.4 GHz medium output power amplification.
  • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm.
  • High collector efficiency: ηC = 60%.
  • UHS0-HV technology (fT = 25 GHz) adopted.
  • High reliability through use of gold electrodes.
  • Flat-lead 4-pin thin-type super minimold (M04) package.

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Datasheet Details

Part number NE664M04
Manufacturer California Eastern Labs
File Size 2.07 MB
Description NPN SILICON RF TRANSISTOR
Datasheet download datasheet NE664M04 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PHASE-OUT DATA SHEET NPN SILICON RF TRANSISTOR NE664M04 / 2SC5754 JEITA Part No. NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.
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