NESG250134 - NECs NPN SiGe RF TRANSISTOR

Features

THIS.

California Eastern Labs

Datasheet Details

Part number	NESG250134
Manufacturer	California Eastern Labs
File Size	736.43 KB
Description	NECs NPN SiGe RF TRANSISTOR
Datasheet	NESG250134 Datasheet
Additional preview pages of the NESG250134 datasheet.

📁 Similar Datasheet

NESG2021M05 - NPN SiGe HIGH FREQUENCY TRANSISTOR (CEL)
NESG2021M05 - NPN SiGe RF Transistor (Renesas)
NESG2021M16 - HIGH FREQUENCY TRANSISTOR (CEL)
NESG2030M04 - NONLINEAR MODEL (NEC)
NESG2030M04 - SiGe HIGH FREQUENCY TRANSISTOR (CEL)
NESG2031M05 - NPN SiGe HIGH FREQUENCY TRANSISTOR (CEL)
NESG2031M16 - HIGH FREQUENCY TRANSISTOR (CEL)
NESG204619 - NPN SiGe TRANSISTOR (CEL)
NESG2046M33 - NECs NPN SiGe TRANSISTOR FOR LOW NOISE / HIGH -GAIN AMPLIFICATION (NEC)
NESG2101M05 - NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR (NEC)

Other Datasheets by California Eastern Labs

NESG2107M33 - NECs NPN SILICON TRANSISTOR
NESG3032M14 - NPN SILICON GERMANIUM RF TRANSISTOR

Full PDF Text Transcription

Click to expand full text

NEC's NPN SiGe RF TRANSISTOR www.DataSheet4U.com FOR MEDIUM OUTPUT POWER NESG250134 AMPLIFICATION (800 mW) 3-PIN POWER MINIMOLD (34 PACKAGE) FEATURES • THIS PRODUCT IS SUITABLE FOR MEDIUM OUTPUT POWER (800 mW) AMPLIFICATION PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 20 dBm, f = 900 MHz MAXIMUM STABLE GAIN: MSG = 23 dB TYP @ VCE = 3.

Published: Mar 27, 2010 |