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2N2222A Datasheet Preview

2N2222A Datasheet

NPN SILICON TRANSISTOR

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2N2221A
2N2222A
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2221A and
2N2222A are silicon NPN epitaxial planar transistors
designed for small signal, general purpose switching
applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
ΘJA
ΘJC
75
40
6.0
800
500
1.8
-65 to +200
350
97
UNITS
V
V
V
mA
mW
W
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=60V
10 nA
ICBO
VCB=60V, TA=150°C
10 μA
ICEV
VCE=60V, VEB=3.0V
10 nA
IEBO
VEB=3.0V
10 nA
BVCBO
IC=10μA
75
V
BVCEO
IC=10mA
40
V
BVEBO
IE=10μA
6.0
V
VCE(SAT)
IC=150mA, IB=15mA
0.3 V
VCE(SAT)
IC=500mA, IB=50mA
1.0 V
VBE(SAT)
IC=150mA, IB=15mA
0.6
1.2
V
VBE(SAT)
IC=500mA, IB=50mA
2.0
2N2221A
2N2222A
V
MIN MAX
MIN MAX
hFE VCE=10V, IC=0.1mA
20 -
35 -
hFE VCE=10V, IC=1.0mA
25 -
50 -
hFE VCE=10V, IC=10mA
35 -
75 -
hFE VCE=10V, IC=10mA, TA=-55°C
15 -
35 -
hFE VCE=10V, IC=150mA
40 120
100 300
hFE VCE=1.0V, IC=150mA
20 -
50 -
hFE VCE=10V, IC=500mA
25 -
40 -
R5 (5-December 2013)




Central

2N2222A Datasheet Preview

2N2222A Datasheet

NPN SILICON TRANSISTOR

No Preview Available !

2N2221A
2N2222A
SILICON
NPN TRANSISTORS
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C) 2N2221A
SYMBOL TEST CONDITIONS
MIN MAX
fT VCE=20V, IC=20mA, f=100MHz
250 -
Cob VCB=10V, IE=0, f=100kHz
- 8.0
Cib VEB=0.5V, IC=0, f=100kHz
- 25
hie VCE=10V, IC=1.0mA, f=1.0kHz
1.0 3.5
hie VCE=10V, IC=10mA, f=1.0kHz
0.2 1.0
hre VCE=10V, IC=1.0mA, f=1.0kHz
- 5.0
hre VCE=10V, IC=10mA, f=1.0kHz
- 2.5
hfe VCE=10V, IC=1.0mA, f=1.0kHz
30 150
hfe VCE=10V, IC=10mA, f=1.0kHz
50 300
hoe VCE=10V, IC=1.0mA, f=1.0kHz
3.0 15
hoe VCE=10V, IC=10mA, f=1.0kHz
10 100
rb’Cc
VCB=10V, IE=20mA, f=31.8MHz
- 150
NF VCE=10V, IC=100μA, RS=1.0kΩ, f=1.0kHz - -
td
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
-
10
tr
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
-
25
ts VCC=30V, IC=150mA, IB1=IB2=15mA
- 225
tf VCC=30V, IC=150mA, IB1=IB2=15mA
- 60
2N2222A
MIN MAX
300 -
- 8.0
- 25
2.0 8.0
0.25 1.25
- 8.0
- 4.0
50 300
75 375
5.0 35
25 200
- 150
- 4.0
- 10
- 25
- 225
- 60
TO-18 CASE - MECHANICAL OUTLINE
UNITS
MHz
pF
pF
x10-4
x10-4
μS
μS
ps
dB
ns
ns
ns
ns
w w w. c e n t r a l s e m i . c o m
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
R5 (5-December 2013)


Part Number 2N2222A
Description NPN SILICON TRANSISTOR
Maker Central
Total Page 3 Pages
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