STMicroelectronics 2N2222A
The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) ) metal case. They are designed for high speed t(s switching application at collector current up to c 500mA, and feature useful current gain over a u wide range of collector current, low leakage Prod currents and low saturation voltage.| Part No. | 2N2222A |
|---|---|
| Datasheet | 2N2222A Download |
| Manufacturer |  STMicroelectronics |
| Description | HIGH SPEED SWITCHES |
| Buy | Stock & Price |
DESCRIPTION
TO-18 TO-39 - Obsolete INTERNAL SCHEMATIC DIAGRAM solete Product(s)ABSOLUTE MAXIMUM RATINGS
ObSymbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 75 V VCEO Collector-Emitter Voltage (IB = 0) 40 V VEBO Emitter-Base Voltage (IC = 0) 6 V IC Collector Current 0.6 A ICM Collector Peak Current (tp < 5 ms) Ptot Total Dissipation at Tamb ≤ 25 oC for 2N2219A for 2N2222A at TC ≤ 25 oC for 2N2219A for 2N2222A Tstg Storage Temperature Tj Max. Operating Junction Temperature 0.8 A 0.8 W 0.5 W 3 W 1.8 W -65 to 175 oC 175 oC February 2003 1/7 2N2219A / 2N2222A THERMAL DATA Rthj-case Thermal Resistance Junction-Case Rthj-amb Thermal Resistance Junction-Ambient Max Max TO-39 50 187.5 TO-18 83.3 300 oC/W oC/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) VCB = 60 V VCB = 60 V Tj = 150 oC 10 nA 10 µA ICEX Collector Cut-off Current (VBE = -3V) VCE = 60 V t(s) IBEX B...
