1N3595 diode equivalent, silicon low leakage diode.
Higher breakdown voltage devices are available on special order.
MAXIMUM RATINGS: (TA=25°C)
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Peak Repet.
The CENTRAL SEMICONDUCTOR 1N3595 is an epitaxial planar silicon diode designed for low leakage, high conductance applications. Higher breakdown voltage devices are available on special order.
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Peak Repetiti.
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