1N3595
1N3595 is DIODE manufactured by DSI.
Technical Data DIODE maximum ratings
Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Current Surge Peak (IFM) Current, Surge (IFM) at tp = 1 µs Max. Power Dissipation (PT) at TA = 25° C Max. Thermal Resistance (Rth J-A) Max. Junction Temperature (TJ)
125.0 V
150.0 V empty
0.2 A
0.6 A
4.0 A
0.5 W
300.0 °C/W
175.0 °C
NO. TYPE empty empty CASE empty empty
1N3595 SILICON empty empty DO-35 empty empty
PERFORMANCE CHARACTERISTICS at T = 25°C, unless otherwise noted
NO. SYMBOL
CONDITIONS
MIN.
MAX.
UNITS
1. VRM
IR = 100.0 µA
(1) 150.0
- V
2. IR
VR = 125.0 V
- 1.0 nA
3. IR
VR = 125.0 V, TA = 150.0° C
- 3.0...
