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1N3595 SILICON LOW LEAKAGE DIODE
JEDEC DO-35 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR 1N3595 is an epitaxial planar silicon diode designed for low leakage, high conductance applications. Higher breakdown voltage devices are available on special order.
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
UNITS
Peak Repetitive Reverse Voltage Peak Working Reverse Voltage Average Forward Current Forward Steady-State Current Recurrent Peak Forward Current Peak Forward Surge Current (1.0s pulse) Peak Forward Surge Current (1.0µs pulse) Power Dissipation
Operating and Storage Junction Temperature
VRRM VRWM IO IF if IFSM IFSM PD
TJ,Tstg
150 125 150 225 600 500 4.