1N3595 Description
The CENTRAL SEMICONDUCTOR 1N3595 is an epitaxial planar silicon diode designed for low leakage, high conductance applications. Higher breakdown voltage devices are available on special order. R0) B C D R1 Marking Code:.
| Part number | 1N3595 |
|---|---|
| Download | 1N3595 Datasheet (PDF) |
| File Size | 75.27 KB |
| Manufacturer | Central Semiconductor |
| Description | SILICON LOW LEAKAGE DIODE |
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| Manufacturer | Part Number | Description |
|---|---|---|
| 1N3595 | Small Signal Diode Absolute Maximum Ratings | |
DSI |
1N3595 | DIODE |
| 1N3595-1 | Diodes | |
VPT Components |
1N3595-1 | Low Leakage Controlled Forward Voltage Diode |
DSI |
1N3595-M | DIODE |
The CENTRAL SEMICONDUCTOR 1N3595 is an epitaxial planar silicon diode designed for low leakage, high conductance applications. Higher breakdown voltage devices are available on special order. R0) B C D R1 Marking Code:.