1N3595 Datasheet and Specifications PDF

The 1N3595 is a Small Signal Diode Absolute Maximum Ratings.

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Part Number1N3595 Datasheet
ManufacturerFairchild Semiconductor
Overview 1N3595 1N3595 DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol VRRM IF(AV) IFSM TA = 25°C unless otherwise noted Parameter Maximum Repetitive Reverse Voltage Av. rameter Breakdown Voltage Forward Voltage Test Conditions IR = 100 µA IF = 1.0 mA IF = 5.0 mA IF = 10 mA IF = 50 mA IF = 100 mA IF = 200 mA VR = 125 V VR = 30 V, TA = 125°C VR = 125 V, TA = 125°C VR = 125 V, TA = 150°C VR = 0, f = 1.0 MHz IF = 10 mA, VR = 3.5 V, RL = 1.0 kΩ Min 150 0.52 0.60 0.65 .
Part Number1N3595 Datasheet
DescriptionSILICON LOW LEAKAGE DIODE
ManufacturerCentral Semiconductor
Overview The CENTRAL SEMICONDUCTOR 1N3595 is an epitaxial planar silicon diode designed for low leakage, high conductance applications. Higher breakdown voltage devices are available on special order. MAXIMU. UNITS 1.0 500 3.0 300 150 0.54 0.69 0.62 0.77 0.65 0.80 0.75 0.88 0.79 0.92 0.83 1.0 8.0 3.0 nA nA µA nA V V V V V V V pF µs (SEE REVERSE SIDE) R1 1N3595 Low Leakage Diode JEDEC DO-35 CASE - MECHCANICAL OUTLINE DIMENSIONS INCHES MILLIMETERS SYMBOL MIN MAX MIN MAX A 0.018 0.022 0.46 0.56 .
Part Number1N3595 Datasheet
DescriptionDIODE
ManufacturerDSI
Overview Technical Data DIODE maximum ratings Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Current Surge Peak (IFM) Current, Surge (IFM) at tp = 1 . , VR = 35.0 V - 3.0 ns 12. 13. 14. 15. 16. 17. 18. 19. 20. Notes (1)pulse-tested tp ≤ 300 µs, duty cycle ≤ 2 % empty empty empty DIMENSIONS in mm Marking 3595 Customer GENERAL PURPOSE .