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1N3595US

Manufacturer: SENSITRON SEMICONDUCTOR

1N3595US datasheet by SENSITRON SEMICONDUCTOR.

This datasheet includes multiple variants, all published together in a single manufacturer document.

1N3595US datasheet preview

1N3595US Datasheet Details

Part number 1N3595US
Datasheet 1N3595US 1N3595-1 Datasheet (PDF)
File Size 274.79 KB
Manufacturer SENSITRON SEMICONDUCTOR
Description Diodes
1N3595US page 2 1N3595US page 3

1N3595US Overview

This voidless hermetically sealed Vf controlled diode is military qualified per MIL-PRF-19500/241 and is targeted for space, mercial and military aircraft, military vehicles, shipboard markets and all high reliability applications.

1N3595US Key Features

  • Hermetic, non-cavity glass package
  • Category I Metallurgically bonded
  • All devices are 100% hot solder dipped
  • JAN/ JANTX/ JANTXV available per MIL-PRF
  • Operating and Storage Temperature: -65oC to +175oC
  • Forward Voltage (max): 1Vdc @ 200mA
  • Reverse Leakage Current (max): 1 nAdc @ VR

1N3595UR-1 from other manufacturers

View 1N3595UR-1 datasheet index

Brand Logo Part Number Description Other Manufacturers
Microsemi Corporation Logo 1N3595UR-1 SWITCHING DIODE Microsemi Corporation
Fairchild Semiconductor Logo 1N3595 Small Signal Diode Absolute Maximum Ratings Fairchild Semiconductor
DSI Logo 1N3595 DIODE DSI
Central Semiconductor Logo 1N3595 SILICON LOW LEAKAGE DIODE Central Semiconductor
VPT Logo 1N3595-1 Low Leakage Controlled Forward Voltage Diode VPT
SENSITRON SEMICONDUCTOR logo - Manufacturer

More Datasheets from SENSITRON SEMICONDUCTOR

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Part Number Description
1N3595-1 Diodes

1N3595US Distributor

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