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1N5532B Datasheet SILICON ZENER DIODES

Manufacturer: Central Semiconductor

Download the 1N5532B datasheet PDF. This datasheet also includes the 1N5518B variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (1N5518B-CentralSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

: The CENTRAL SEMICONDUCTOR 1N5518B series silicon Zener diode is designed for low leakage, low current, and low noise applications.

MARKING: FULL PART NUMBER DO-35 CASE MAXIMUM RATINGS: (TA=25°C) Power Dissipation Operating and Storage Junction Temperature SYMBOL PD TJ, Tstg 400 -65 to +200 UNITS mW °C ELECTRICAL CHARACTERISTICS: (TA=25°C) VF=1.1V MAX @ IF=200mA (for all types) Type Zener Voltage VZ @ IZT MIN NOM MAX V V V Test Current IZT mA Maximum Zener Impedance (Note 1) ZZT @ IZT Ω Maximum Reverse Current IR @ VR μA V 1N5518B 3.135 3.3 3.465 20 26 5.0 1.0 1N5519B 3.420 3.6 3.780 20 24 3.0 1.0 1N5520B 3.705 3.9 4.095 20 22 1.0 1.0 1N5521B 4.085 4.3 4.515 20 18 3.0 1.5 1N5522B 4.465 4.7 4.935 10 22 2.0 2.0 1N5523B 4.845 5.1 5.355 5.0 26 2.0 2.5 1N5524B 5.320 5.6 5.880 3.0 30 2.0 3.5 1N5525B 5.890 6.2 6.510 1.0 30 1.0 5.0 1N5526B 6.460 6.8 7.140 1.0 30 1.0 6.2 1N5527B 7.125 7.5 7.875 1.0 35 0.5 6.8 1N5528B 7.790 8.2 8.610 1.0 40 0.5 7.5 1N5529B 8.645 9.1 9.555 1.0 45 0.1 8.2 1N5530B 9.500 10 10.50 1.0 60 0.05 9.1 1N5531B 10.45 11 11.55 1.0 80 0.05 9.9 1N5532B 11.40 12 12.60 1.0 90 0.05 10.8 1N5533B 12.35 13 13.65 1.0 90 0.01 11.7 1N5534B 13.30 14 14.70 1.0 100 0.01 12.6 1N5535B 14.25 15 15.75 1.0 100 0.01 13.5 1N5536B 15.20 16 16.80 1.0 100 0.01 14.4 1N5537B 16.15 17 17.85 1.0 100 0.01 15.3 1N5538B 17.10 18 18.90 1.0 100 0.01 16.2 Notes: 1.

Measured with 10%, 60Hz AC superimposed on IZT.

Overview

1N5518B THRU 1N5546B SILICON ZENER DIODES 400mW, 3.3 THRU 33 VOLT ±5% TOLERANCE w w w.

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