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2N2218 - SILICON NPN TRANSISTOR

Description

The CENTRAL SEMICONDUCTOR 2N2218 and 2N2218A are silicon NPN transistors manufactured by the epitaxial planar process, and designed for small signal general purpose and switching applications.

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2N2218 2N2218A SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2218 and 2N2218A are silicon NPN transistors manufactured by the epitaxial planar process, and designed for small signal general purpose and switching applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation PD Power Dissipation (TC=25°C) PD Operating and Storage Junction Temperature TJ, Tstg 2N2218 60 2N2218A 75 30 40 5.0 6.0 800 800 3.0 -65 to +200 ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS ICBO VCB=50V ICBO VCB=60V ICEV VCE=60V, VEB=3.
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