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2N3635 - SILICON PNP TRANSISTORS

Download the 2N3635 datasheet PDF. This datasheet also covers the 2N3634 variant, as both devices belong to the same silicon pnp transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

The CENTRAL SEMICONDUCTOR 2N3634 and 2N3635 are silicon PNP epitaxial planar transistors designed for general purpose switching and amplifier applications.

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Note: The manufacturer provides a single datasheet file (2N3634-CentralSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Central Semiconductor

Part Number Description
2N3634 SILICON PNP TRANSISTORS
2N3637 PNP SILICON TRANSISTOR
2N3638 (2N3xxx) PNP Switching and General Purpose
2N3641 NPN SILICON SIGNAL TRANSISTORS
2N3642 NPN SILICON SIGNAL TRANSISTORS
2N3643 NPN SILICON SIGNAL TRANSISTORS
2N3644 PNP Transistor
2N3645 PNP Transistor
2N3646 NPN SILICON SWITCHING TRANSISTORS
2N3668 (2N3668 - 2N3670) SILICON CONTROLLED RECTIFIER

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N3634 2N3635 SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3634 and 2N3635 are silicon PNP epitaxial planar transistors designed for general purpose switching and amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg ΘJA ΘJC 140 140 5.0 1.0 1.0 5.0 -65 to +200 175 35 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=100V IEBO VEB=3.