| Part Number | 2N3635 |
|---|---|
| Manufacturer | Microsemi |
| Overview | TECHNICAL DATA PNP SILICON AMPLIFIER TRANSISTOR Qualified per MIL-PRF-19500/357 Devices 2N3634 2N3634L 2N3635 2N3635L 2N3636 2N3636L 2N3637 2N3637L Qualified Level JAN JANTX JANTXV JANS MAXIMUM RATIN. er Breakdown Current IC = 10 mAdc Collector-Base Cutoff Current VCB = 100 Vdc VCB = 140 Vdc Emitter-Base Cutoff Current VEB = 3.0 Vdc VEB = 5.0 Vdc Collector-Emitter Cutoff Current VCE = 100 Vdc 2N3634, 2N3635 2N3636, 2N3637 V(BR)CEO 140 175 100 10 50 10 10 Vdc ηAdc µAdc ηAdc µAdc µAdc ICBO 2N3634,. |
2N3635 Datasheet
The 2N3635 is a PNP SILICON AMPLIFIER TRANSISTOR.
| Part Number | 2N3635 |
|---|---|
| Description | SILICON PNP TRANSISTORS |
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR 2N3634 and 2N3635 are silicon PNP epitaxial planar transistors designed for general purpose switching and amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXI. A, f=100MHz (2N3635) 200 Cob VCB=20V, IE=0, f=1.0MHz Cib VEB=1.0V, IC=0, f=1.0MHz NF VCE=10V, IC=0.5mA, RS=1.0kΩ, f=1.0kHz ton VCC=100V, VBE=4.0V, IC=50mA toff IB1=IB2=5.0mA MAX 100 50 0.3 0.5 0.8 0.9 10 75 3.0 400 600 UNITS V V V A W W °C °C/W °C/W UNITS nA nA V V V V V V V MHz MHz pF p. |
| Part Number | 2N3635 |
|---|---|
| Description | HIGH VOLTAGE TRANSISTOR |
| Manufacturer | Motorola Semiconductor |
| Overview | MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage — Collector Current Continuous @ Total Device Dissipation T/ = 25°C Derate above 25°C @ Total Device Dissip. Jc = ON CHARACTERISTICS DC Current Gain(1) c (l = 0.1 mAdc, Vce = 10 Vdc) 2N3634, 2N3636 2N3635, 2N3637 (lC = 1.0 mAdc, Vce = 10 Vdc) 2N3634, 2N3636 2N3635, 2N3637 (lC = 10 mAdc, Vce = 10 Vdc) 2N3634, 2N3636 2N3635, 2N3637 (lC = 50 mAdc, Vce = 1° Vdc) (lC = 150 mAdc, Vce = 10 Vdc)- ' Collec. |
| Part Number | 2N3635 |
|---|---|
| Description | PNP SILICON PLANAR RF TRANSISTORS |
| Manufacturer | Continental Device India |
| Overview | SYMBOL Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation @ Ta=25ºC Derate Above 25ºC VCEO VCBO VEBO IC PD Power Dissipation@ Tc=25ºC PD De. , IE =0 140 V 175 V Emitter Base Breakdown Voltage Collector Leakage Current Emitter Leakage Current Collector Emitter Saturation Voltage Base Emitter Saturation Voltage BVEBO IE=10µA, IC=0 ICBO VCB=100V, IE=0 IEBO VEB=3V, IC=0 VCE( sat) * IC=10mA, IB =1mA IC=50mA, IB =5mA VBE(Sat) * IC=10mA,I. |