2N3635 - PNP SILICON PLANAR RF TRANSISTORS

CDIL

General Description

SYMBOL Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation @ Ta=25ºC Derate Above 25ºC VCEO VCBO VEBO IC PD Power Dissipation@ Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Temperature Range Tj, Tstg 2N3635 2N3636, 37 140

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2N3635 pnp silicon planar rf transistors by CDIL - Datasheet Preview

Datasheet Details

Part number	2N3635
Manufacturer	CDIL
File Size	138.32 KB
Description	PNP SILICON PLANAR RF TRANSISTORS
Datasheet	2N3635 Datasheet

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Other Datasheets by CDIL

Part Number	Description
2N3636	PNP SILICON PLANAR RF TRANSISTORS
2N3637	PNP SILICON PLANAR RF TRANSISTORS
2N3644	PNP Transistor
2N3645	PNP Transistor
2N3019	NPN SILICON PLANAR EPITAXIAL TRANSISTORS

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR RF TRANSISTORS 2N3635 2N3636 2N3637 TO-39 Metal Can Package 2N3635 and 2N3637 Are PNP Silicon Transistros For High Voltage Switching and Low Power Amplifier. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation @ Ta=25ºC Derate Above 25ºC VCEO VCBO VEBO IC PD Power Dissipation@ Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Temperature Range Tj, Tstg 2N3635 2N3636, 37 140 175 140 175 5 1 1 5.71 5 28.