Datasheet4U Logo Datasheet4U.com

2N3637 - PNP SILICON PLANAR RF TRANSISTORS

Download the 2N3637 datasheet PDF. This datasheet also covers the 2N3635 variant, as both devices belong to the same pnp silicon planar rf transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

SYMBOL Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation @ Ta=25ºC Derate Above 25ºC VCEO VCBO VEBO IC PD Power Dissipation@ Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Temperature Range Tj, Tstg 2N3635 2N3636, 37 140

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N3635-CDIL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N3637
Manufacturer CDIL
File Size 138.32 KB
Description PNP SILICON PLANAR RF TRANSISTORS
Datasheet download datasheet 2N3637 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR RF TRANSISTORS 2N3635 2N3636 2N3637 TO-39 Metal Can Package 2N3635 and 2N3637 Are PNP Silicon Transistros For High Voltage Switching and Low Power Amplifier. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation @ Ta=25ºC Derate Above 25ºC VCEO VCBO VEBO IC PD Power Dissipation@ Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Temperature Range Tj, Tstg 2N3635 2N3636, 37 140 175 140 175 5 1 1 5.71 5 28.