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2N3637 Datasheet PDF

Continental Device India 2N3637

The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.
Part No. 2N3637
Datasheet 2N3637 Download
Manufacturer
Continental Device India
Description PNP SILICON PLANAR RF TRANSISTORS
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2N3637 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation @ Ta=25ºC Derate Above 25ºC VCEO VCBO VEBO IC PD Power Dissipation@ Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Temperature Range Tj, Tstg 2N3635 2N3636, 37 140 175 140 175 5 1 1 5.71 5 28.6 -65 to +200 UNITS V V V A W mW/ºC W mW/ºC ºC

ELECTRICAL CHARACTERISTICS

(Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL Collector Emitter Breakdown Voltage BVCEO * IC=10mA, IB =0 2N3635 2N3636, 37 MIN MAX UNITS 140 V 175 V Collector Base Breakdown Voltage 2N3635 2N3636, 37 BVCBO IC=100µA, IE =0 140 V 175 V Emitter Base Breakdown Voltage Collector Leakage Current Emitter Leakage Current Collector Emitter Saturation Voltage Base Emitter Saturation Voltage BVEBO IE=10µA, IC=0 ICBO VCB=100V, IE=0 IEBO VEB=3V, IC=0 VCE( sat) * IC=10mA, IB =1mA IC=50mA, IB =5mA VBE(Sat) * IC=10mA,IB=1mA IC=50mA,IB...
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