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2N3637

Manufacturer: Continental Device India

2N3637 datasheet by Continental Device India.

This datasheet includes multiple variants, all published together in a single manufacturer document.

2N3637 datasheet preview

2N3637 Datasheet Details

Part number 2N3637
Datasheet 2N3637 2N3635 Datasheet (PDF)
File Size 138.32 KB
Manufacturer Continental Device India
Description PNP SILICON PLANAR RF TRANSISTORS
2N3637 page 2 2N3637 page 3

2N3637 Overview

SYMBOL Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation @ Ta=25ºC Derate Above 25ºC VCEO VCBO VEBO IC PD Power Dissipation@ Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Temperature Range.

2N3637 from other manufacturers

View 2N3637 datasheet index

Brand Logo Part Number Description Other Manufacturers
Seme LAB Logo 2N3637 PNP SILICON TRANSISTOR Seme LAB
Microsemi Corporation Logo 2N3637 PNP SILICON AMPLIFIER TRANSISTOR Microsemi Corporation
Central Semiconductor Logo 2N3637 PNP SILICON TRANSISTOR Central Semiconductor
ON Semiconductor Logo 2N3637 Low Power Transistors ON Semiconductor
TT Logo 2N3637 SILICON PNP TRANSISTOR TT
Continental Device India logo - Manufacturer

More Datasheets from Continental Device India

View all Continental Device India datasheets

Part Number Description
2N3635 PNP SILICON PLANAR RF TRANSISTORS
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2N3019 NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N3020 NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N3053 NPN SILICON PLANAR TRANSISTOR
2N3053A NPN SILICON PLANAR TRANSISTOR
2N3055HV NPN Power Transistor
2N3250 PNP SILICON PLANAR SWITCHING TRANSISTORS

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