SYMBOL Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation @ Ta=25ºC Derate Above 25ºC VCEO VCBO VEBO IC PD Power Dissipation@ Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Temperature Range Tj, Tstg 2N3635 2N3636, 37 140 175 140 175 5 1 1 5.71 5 28.6 -65 to +200 UNITS V V V A W mW/ºC W mW/ºC ºC.
| Part Number | Manufacturer | Description |
|---|---|---|
| 2N3637 | Central Semiconductor | PNP SILICON TRANSISTOR |
| 2N3637L | onsemi | Low Power Transistors |
| 2N3637 | Microsemi | PNP SILICON AMPLIFIER TRANSISTOR |
| 2N3637 | VPT Components | PNP Radiation Hardened Amplifier |
| 2N3637CSM | Seme LAB | PNP SILICON TRANSISTOR |
| 2N3637L | Microsemi | PNP SILICON AMPLIFIER TRANSISTOR |
| 2N3637 | TT Electronics | SILICON PNP TRANSISTOR |
| 2N3635 | Microsemi | PNP SILICON AMPLIFIER TRANSISTOR |
| 2N3635 | onsemi | Low Power Transistors |
| 2N3635L | onsemi | Low Power Transistors |
