Datasheet Details
| Part number | 2N3637 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 301.52 KB |
| Description | PNP SILICON TRANSISTOR |
| Datasheet | 2N3637-CentralSemiconductor.pdf |
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Overview: 2N3637 PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i .
| Part number | 2N3637 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 301.52 KB |
| Description | PNP SILICON TRANSISTOR |
| Datasheet | 2N3637-CentralSemiconductor.pdf |
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: The CENTRAL SEMICONDUCTOR 2N3637 is a PNP Silicon Transistor, mounted in a hermetically sealed TO-39 package, designed for general purpose amplifier and high voltage switching applications.
MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg ΘJA ΘJC 175 175 5.0 1.0 1.0 5.0 -65 to +200 175 35 UNITS V V V A W W °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=100V IEBO VEB=3.0V BVCBO IC=100μA 175 BVCEO IC=10mA 175 BVEBO IE=10μA 5.0 VCE(SAT) IC=10mA, IB=1.0mA VCE(SAT) IC=50mA, IB=5.0mA VBE(SAT) IC=10mA, IB=1.0mA VBE(SAT) IC=50mA, IB=5.0mA 0.65 hFE VCE=10V, IC=0.1mA 80 hFE VCE=10V, IC=1.0mA 90 hFE VCE=10V, IC=10mA 100 hFE VCE=10V, IC=50mA 100 hFE VCE=10V, IC=150mA 50 fT VCE=30V, IC=30mA, f=100MHz 200 Cob VCB=20V, IE=0, f=1.0MHz Cib VEB=1.0V, IC=0, f=1.0MHz ton VCC=100V, VBE=4.0V, IC=50mA, IB1=IB2=5.0mA toff VCC=100V, VBE=4.0V, IC=50mA, IB1=IB2=5.0mA MAX 100 50 0.3 0.5 0.8 0.9 300 10 75 400 600 UNITS nA nA V V V V V V V MHz pF pF ns ns R0 (22-November 2010) 2N3637 PNP SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX hie VCE=10V, IC=10mA, f=1.0kHz 200 hre VCE=10V, IC=10mA, f=1.0kHz hfe VCE=10V, IC=10mA, f=1.0kHz 80 hoe VCE=10V, IC=10mA, f=1.0kHz NF VCE=10V, IC=0.5mA, f=1.0kHz, RS=1.0kΩ 1200 3.0 320 200 3.0 TO-39 CASE - MECHANICAL OUTLINE UNITS Ω x10-4 μS dB w w w.
c e n t r a l s e m i .
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N3637 | PNP SILICON TRANSISTOR | Seme LAB |
 |
2N3637 | PNP SILICON AMPLIFIER TRANSISTOR | Microsemi Corporation |
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2N3637 | PNP SILICON PLANAR RF TRANSISTORS | CDIL |
 |
2N3637 | Low Power Transistors | ON Semiconductor |
 |
2N3637 | SILICON PNP TRANSISTOR | TT |
| Part Number | Description |
|---|---|
| 2N3634 | SILICON PNP TRANSISTORS |
| 2N3635 | SILICON PNP TRANSISTORS |
| 2N3638 | (2N3xxx) PNP Switching and General Purpose |
| 2N3641 | NPN SILICON SIGNAL TRANSISTORS |
| 2N3642 | NPN SILICON SIGNAL TRANSISTORS |
| 2N3643 | NPN SILICON SIGNAL TRANSISTORS |
| 2N3644 | PNP Transistor |
| 2N3645 | PNP Transistor |
| 2N3646 | NPN SILICON SWITCHING TRANSISTORS |
| 2N3668 | (2N3668 - 2N3670) SILICON CONTROLLED RECTIFIER |