2N3636 datasheet by Seme LAB.
| Part number | 2N3636 |
|---|---|
| Datasheet | 2N3636-SemeLAB.pdf |
| File Size | 10.13 KB |
| Manufacturer | Seme LAB |
| Description | Bipolar PNP Device |
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2N3636 Dimensions in mm (inches). 0.41 (0.016) 0.53 (0.021) dia. VCEO = 175V IC = 1A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications Parameter VCEO IC(CONT) hFE ft PD Test Conditions @ 10/50m (VCE / IC) Maximum Working Voltage Min.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2N3636 | PNP SILICON AMPLIFIER TRANSISTOR | Microsemi Corporation |
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2N3636 | HIGH VOLTAGE TRANSISTOR | Motorola |
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2N3636 | PNP SILICON PLANAR RF TRANSISTORS | CDIL |
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2N3636 | Silicon Planar RF Transistors | Comset Semiconductor |
 |
2N3636 | Low Power Transistors | ON Semiconductor |
| Part Number | Description |
|---|---|
| 2N3634CSM | PNP SILICON TRANSISTOR |
| 2N3637 | PNP SILICON TRANSISTOR |
| 2N3637CSM | PNP SILICON TRANSISTOR |
| 2N3665 | Bipolar NPN Device |
| 2N3676 | Bipolar NPN Device |
| 2N3007 | Bipolar NPNP Device |
| 2N3011 | Bipolar NPN Device |
| 2N3012 | Bipolar PNP Device |
| 2N3012CSM | Bipolar PNP Device |
| 2N3019 | NPN SILICON TRANSISTOR |
