Datasheet Details
| Part number | 2N3636 |
|---|---|
| Manufacturer | CDIL |
| File Size | 138.32 KB |
| Description | PNP SILICON PLANAR RF TRANSISTORS |
| Datasheet | 2N3636 2N3635 Datasheet (PDF) |
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Overview: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified pany PNP SILICON PLANAR RF TRANSISTORS 2N3635 2N3636 2N3637 TO-39 Metal Can Package 2N3635 and 2N3637 Are PNP Silicon Transistros For High Voltage Switching and Low Power Amplifier.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | 2N3636 |
|---|---|
| Manufacturer | CDIL |
| File Size | 138.32 KB |
| Description | PNP SILICON PLANAR RF TRANSISTORS |
| Datasheet | 2N3636 2N3635 Datasheet (PDF) |
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SYMBOL Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation @ Ta=25ºC Derate Above 25ºC VCEO VCBO VEBO IC PD Power Dissipation@ Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Temperature Range Tj, Tstg 2N3635 2N3636, 37 140 175 140 175 5 1 1 5.71 5 28.6 -65 to +200 UNITS V V V A W mW/ºC W mW/ºC ºC ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL Collector Emitter Breakdown Voltage BVCEO * IC=10mA, IB =0 2N3635 2N3636, 37 MIN MAX UNITS 140 V 175 V Collector Base Breakdown Voltage 2N3635 2N3636, 37 BVCBO IC=100µA, IE =0 140 V 175 V Emitter Base Breakdown Voltage Collector Leakage Current Emitter Leakage Current Collector Emitter Saturation Voltage Base Emitter Saturation Voltage BVEBO IE=10µA, IC=0 ICBO VCB=100V, IE=0 IEBO VEB=3V, IC=0 VCE( sat) * IC=10mA, IB =1mA IC=50mA, IB =5mA VBE(Sat) * IC=10mA,IB=1mA IC=50mA,IB=5mA 5 V 100 nA 50 nA 0.3 V 0.5 V 0.8 V 0.65 0.9 V Continental Device India Limited Data Sheet Page 1 of 4 PNP SILICON PLANAR RF TRANSISTORS 2N3635 2N3636 2N3637 TO-39 Metal Can Package DESCRIPTION DC Current Gain SYMBOL hFE IC=2mA,VCE=10V 2N 3635, 37 2N3636 2N 3635, 37 IC=1mA,VCE=10V 2N3636 IC=10mA*,VCE=10V 2N 3635, 37 2N3636 IC=50mA*,VCE=10V 2N 3635, 37 2N3636 IC=150mA*,VCE=10V 2N 3635, 37 2N3636 SMALL SIGNAL CHARACTERISTICS ( at f =1MHz otherwise specified) Transition Frequency fT IC=30mA, VCE=30V 2N 3635, 37 f=100MHz 2N3636 Current Gain 2N 3635, 37 2N3636 | hfe | IC=10mA, VCE=10V, f=1kHz Input Impedence hie IC=10mA, VCE=10V
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N3636 | PNP SILICON AMPLIFIER TRANSISTOR | Microsemi Corporation |
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2N3636 | HIGH VOLTAGE TRANSISTOR | Motorola |
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2N3636 | Bipolar PNP Device | Seme LAB |
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2N3636 | Silicon Planar RF Transistors | Comset Semiconductor |
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2N3636 | Low Power Transistors | ON Semiconductor |
| Part Number | Description |
|---|---|
| 2N3635 | PNP SILICON PLANAR RF TRANSISTORS |
| 2N3637 | PNP SILICON PLANAR RF TRANSISTORS |
| 2N3644 | PNP Transistor |
| 2N3645 | PNP Transistor |
| 2N3019 | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| 2N3020 | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| 2N3053 | NPN SILICON PLANAR TRANSISTOR |
| 2N3053A | NPN SILICON PLANAR TRANSISTOR |
| 2N3055HV | NPN Power Transistor |
| 2N3250 | PNP SILICON PLANAR SWITCHING TRANSISTORS |