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2N3636 Datasheet PDF

Comset Semiconductor 2N3636

The 2N3636 and 2N3637 are PNP transistors mounted in TO-39 metal case. They are intended for high voltage switching and Low Power Amplifier.
Part No. 2N3636
Datasheet 2N3636 Download
Manufacturer
Comset Semiconductor
Description Silicon Planar RF Transistors
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2N3636 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

Symbol VCEO VCBO VEBO IC Ratings Collector-Emitter Voltage (Ib = 0) Collector-Base Voltage (Ie = 0) Emitter-Base Voltage (Ic = 0) Collector Current Tamb = 25°C Value -175 -175 -5 -1 1 Unit V V V A PD Total Power Dissipation W Tcase = 25°C 5 200 -65 to +200 -65 to +150 °C °C °C TJ TStg Tamb Junction Temperature Storage Temperature Range Operating Ambient Temperature

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted Symbol ICBO IEBO VCEO VCBO VEBO Ratings Collector Cutoff Current Emitter Cutoff Current Collector Emitter Breakdown Voltage (*) Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Test Condition(s) VCB = -100 V, IE =0 VEB = -3 V, IC =0 IC = -10 mA, IB =0 IC = -100 µA, IE =0 IE = -10 mA, IC =0 COMSET SEMICONDUCTORS Min -175 -175 -5 Typ - Max -100 -50 - Unit nA nA V V V 1/3 21/09/2012 Datasheet pdf - PNP 2N3636 – 2N3637

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) 2N3636 IC = -0.1 mA VCE...
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