The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
PNP 2N3636 – 2N3637 SILICON PLANAR RF TRANSISTORS
The 2N3636 and 2N3637 are PNP transistors mounted in TO-39 metal case. They are intended for high voltage switching and Low Power Amplifier. Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO VCBO VEBO IC
Ratings
Collector-Emitter Voltage (Ib = 0) Collector-Base Voltage (Ie = 0) Emitter-Base Voltage (Ic = 0) Collector Current Tamb = 25°C
Value
-175 -175 -5 -1 1
Unit
V V V A
PD
Total Power Dissipation
www.DataSheet.