2N3636
Description
MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage — Collector Current Continuous @ Total Device Dissipation T/ = 25°C Derate above 25°C @ Total Device Dissip...
- Part: 2N3636
- Description: HIGH VOLTAGE TRANSISTOR
- Category: Transistor
- Manufacturer: Motorola Semiconductor
- Size: 228.73 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| 2N3636 | Microsemi | PNP SILICON AMPLIFIER TRANSISTOR |
| 2N3636 | Continental Device India | PNP SILICON PLANAR RF TRANSISTORS |
| 2N3636L | Microsemi | PNP SILICON AMPLIFIER TRANSISTOR |
| 2N3636 | Comset Semiconductor | Silicon Planar RF Transistors |
| 2N3636 | VPT Components | PNP Radiation Hardened Amplifier |
| 2N3637 | Microsemi | PNP SILICON AMPLIFIER TRANSISTOR |
| 2N3637 | VPT Components | PNP Radiation Hardened Amplifier |
| 2N3632 | Microsemi | RF & MICROWAVE TRANSISTORS |
| 2N3637CSM | Seme LAB | PNP SILICON TRANSISTOR |
| 2N3637L | Microsemi | PNP SILICON AMPLIFIER TRANSISTOR |