• Part: 2N3636
  • Description: HIGH VOLTAGE TRANSISTOR
  • Manufacturer: Motorola Semiconductor
  • Size: 228.73 KB
Download 2N3636 Datasheet PDF
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Datasheet Summary

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage - Collector Current Continuous @ Total Device Dissipation T/ = 25°C Derate above 25°C @ Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range 2N3634 2N3636 Symbol 2N3635 2N3637 VCEO VCBO VEBO 'C 1.0 5.71 Pd TJ- Tstg 5.0 28.6 -65 to +200 Unit Vdc Vdc Vdc Adc Watt mW/°C Watts mW/°C °C 2N3634 thru 2N3637 JAN, JTX AVAILABLE CASE 79, STYLE 1 TO-39 (TO-39-205AD) HIGH VOLTAGE TRANSISTOR PNP SILICON ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter...