Datasheet Details
| Part number | 2N3798 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 125.25 KB |
| Description | SILICON PNP TRANSISTORS |
| Download | 2N3798 Download (PDF) |
|
|
| Part number | 2N3798 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 125.25 KB |
| Description | SILICON PNP TRANSISTORS |
| Download | 2N3798 Download (PDF) |
|
|
|
: The CENTRAL SEMICONDUCTOR 2N3798, 2N3799 series devices are silicon PNP epitaxial planar transistors designed for low noise amplifier applications.
MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL 2N3798 2N3799 2N3798A 2N3799A UNITS Collector-Base Voltage VCBO 60 90 V Collector-Emitter Voltage VCEO 60 90 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 50 mA Power Dissipation PD 360 mW Power Dissipation (TC=25°C) PD 1.2 W Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C Thermal Resistance JA 0.49 °C/mW Thermal Resistance JC 150 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO VCB=50V 10 nA ICBO VCB=50V, TA=150°C 10 μA IEBO VEB=4.0V 20 nA BVCBO IC=10μA (2N3798, 2N3799) 60 V BVCBO IC=10μA (2N3798A, 2N3799A) 90 V BVCEO IC=10mA (2N3798, 2N3799) 60 V BVCEO IC=10mA (2N3798A, 2N3799A) 90 V BVEBO IE=10μA 5.0 V VCE(SAT) IC=100μA, IB=10μA 0.20 V VCE(SAT) IC=1.0mA, IB=100μA 0.25 V VBE(SAT) IC=100μA, IB=10μA 0.70 V VBE(SAT) IC=1.0mA, IB=100μA 0.80 V VBE(ON) VCE=5.0V, IC=100μA 0.70 V 2N3798 2N3799 2N3798A 2N3799A MIN MAX MIN MAX hFE VCE=5.0V, IC=1.0μA -- 75 - hFE VCE=5.0V, IC=10μA 100 - 225 - hFE VCE=5.0V, IC=100μA 150 - 300 - hFE VCE=5.0V, IC=100μA, TA=-55°C 75 - 150 - hFE VCE=5.0V, IC=500μA 150 450 300 900 hFE VCE=5.0V, IC=1.0mA hFE VCE=5.0V, IC=10mA 150 125 - 300 - 250 R1 (22-September 2014) 2N3798 2N3798A 2N3799 2N3799A SILICON PNP TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) 2N3798 2N3799 2N3798A 2N3799A SYMBOL TEST CONDITIONS MIN TYP MAX MIN TYP MAX fT VCE=5.0V, IC=500μA, f=30MHz 30 - - 30 - - fT* VCE=5.0V, IC=1.0mA, f=100MHz - 80 - - 80 - Cob* VCB=5.0V, IE=0, f=100kHz -
2N3798 2N3798A 2N3799 2N3799A SILICON PNP TRANSISTORS w w w.
c e n t r a l s e m i .
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2N3798 | AMPLIFIER TRANSISTOR | Motorola |
|
2N3798A | PNP SILICON ANNULAR TRANSISTORS | Motorola |
| Part Number | Description |
|---|---|
| 2N3798A | SILICON PNP TRANSISTORS |
| 2N3790 | PNP POWER TRANSISTORS |
| 2N3791 | PNP POWER TRANSISTORS |
| 2N3792 | PNP POWER TRANSISTORS |
| 2N3799 | SILICON PNP TRANSISTORS |
| 2N3799A | SILICON PNP TRANSISTORS |
| 2N3700 | NPN TRANSISTORS |
| 2N3701 | NPN TRANSISTORS |
| 2N3702 | PNP Transistor |
| 2N3703 | PNP Transistor |