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2N3798A - PNP SILICON ANNULAR TRANSISTORS

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2N3798, 2N3798A (SILICON) 2N3799,2N3799A PNP SILICON ANNULAR TRANSISTORS · .. designed for low-level, low-noise amplifier applications. • High Collector-Emitter Breakdown VoltagesBVCEO = 60 Vdc (Min) - 2N3798, 2N3799 90 Vdc (Min) - 2N3798A, 2N3799A • DC Current Gain - @ IC = 500 IlAdc hFE = 150-450 - 2N3798, 2N3798A 300-900 - 2N3799. 2N3799A • Low Noise Figure NF = 1.5 dB (Max) @ 1.0 kHz and 10 kHz PNP SILICON AMPLIFIER TRANSISTORS ! *MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage CoHector Current - Continuous Total Device Dissipation @TA ., 25°C Derate above 25°C Total Device Dissipation @lTC =250 C Derate above 250 C Operating and Storage Junction Temperature Range Symbol VCEO VCB VEB IC Po Po TJ.