2N3798A
2N3798A is PNP SILICON ANNULAR TRANSISTORS manufactured by Motorola Semiconductor.
2N3798, 2N3798A (SILICON) 2N3799,2N3799A
PNP SILICON ANNULAR TRANSISTORS
- .. designed for low-level, low-noise amplifier applications.
- High Collector-Emitter Breakdown VoltagesBVCEO = 60 Vdc (Min)
- 2N3798, 2N3799 90 Vdc (Min)
- 2N3798A, 2N3799A
- DC Current Gain
- @ IC = 500 IlAdc hFE = 150-450
- 2N3798, 2N3798A 300-900
- 2N3799. 2N3799A
- Low Noise Figure NF = 1.5 dB (Max) @ 1.0 kHz and 10 kHz
PNP SILICON AMPLIFIER TRANSISTORS
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- MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage CoHector Current
- Continuous Total Device Dissipation @TA ., 25°C
Derate above 25°C
Total Device Dissipation @lTC =250 C
Derate above 250 C Operating and Storage...
