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2N3798 - SILICON PNP TRANSISTORS

General Description

The CENTRAL SEMICONDUCTOR 2N3798, 2N3799 series devices are silicon PNP epitaxial planar transistors designed for low noise amplifier applications.

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2N3798 2N3798A 2N3799 2N3799A SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3798, 2N3799 series devices are silicon PNP epitaxial planar transistors designed for low noise amplifier applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL 2N3798 2N3799 2N3798A 2N3799A UNITS Collector-Base Voltage VCBO 60 90 V Collector-Emitter Voltage VCEO 60 90 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 50 mA Power Dissipation PD 360 mW Power Dissipation (TC=25°C) PD 1.2 W Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C Thermal Resistance JA 0.