| Part Number | 2N3798A Datasheet |
|---|---|
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR 2N3798, 2N3799 series devices are silicon PNP epitaxial planar transistors designed for low noise amplifier applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATI. 798A, 2N3799A) 90 V BVCEO IC=10mA (2N3798, 2N3799) 60 V BVCEO IC=10mA (2N3798A, 2N3799A) 90 V BVEBO IE=10μA 5.0 V VCE(SAT) IC=100μA, IB=10μA 0.20 V VCE(SAT) IC=1.0mA, IB=100μA 0.25 V VBE(SAT) IC=100μA, IB=10μA 0.70 V VBE(SAT) IC=1.0mA, IB=100μA 0.80 V VBE(ON) VCE=5.0V, IC=100. |
2N3798A Datasheet and Specifications PDF
The 2N3798A is a SILICON PNP TRANSISTORS.
| Part Number | 2N3798A Datasheet |
|---|---|
| Description | PNP SILICON ANNULAR TRANSISTORS |
| Manufacturer | Motorola Semiconductor |
| Overview | 2N3798, 2N3798A (SILICON) 2N3799,2N3799A PNP SILICON ANNULAR TRANSISTORS · .. designed for low-level, low-noise amplifier applications. • High Collector-Emitter Breakdown VoltagesBVCEO = 60 Vdc (Min). tion to Ambient -Indicatas JEOEC Registered Data. Symbol 9JC 9JA Max 0.15 0.49 Unit °C/mW °C/mW l . 0r.2n09or- g:;~ OIAll DlA ~I ~DlA Pin 1. Emitter 2. Base 3. Collector 0.050 0.110 40 0.500 j 0.100 0.028 if.04lI Collector Connected to Case CASE 22 (1) (TO-IS) 2-623 2N3798, 2N3798A, 2N379. |