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2N3799A - PNP SILICON ANNULAR TRANSISTORS

Download the 2N3799A datasheet PDF. This datasheet also covers the 2N3798A variant, as both devices belong to the same pnp silicon annular transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N3798A-Motorola.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
2N3799 AMPLIFIER TRANSISTOR
2N379 PNP Transistor
2N3790 PNP silicon power transistors
2N3791 PNP silicon power transistors
2N3792 PNP silicon power transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N3798, 2N3798A (SILICON) 2N3799,2N3799A PNP SILICON ANNULAR TRANSISTORS · .. designed for low-level, low-noise amplifier applications. • High Collector-Emitter Breakdown VoltagesBVCEO = 60 Vdc (Min) - 2N3798, 2N3799 90 Vdc (Min) - 2N3798A, 2N3799A • DC Current Gain - @ IC = 500 IlAdc hFE = 150-450 - 2N3798, 2N3798A 300-900 - 2N3799. 2N3799A • Low Noise Figure NF = 1.5 dB (Max) @ 1.0 kHz and 10 kHz PNP SILICON AMPLIFIER TRANSISTORS ! *MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage CoHector Current - Continuous Total Device Dissipation @TA ., 25°C Derate above 25°C Total Device Dissipation @lTC =250 C Derate above 250 C Operating and Storage Junction Temperature Range Symbol VCEO VCB VEB IC Po Po TJ.