2N4123 Description
The CENTRAL SEMICONDUCTOR 2N4123 series devices are plementary silicon small signal transistors manufactured by the epitaxial planar process designed for general purpose amplifier and switching applications. FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C) 2N4123 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=20V - 50 IEBO VEB=3.0V - 50 BVCBO IC=10μA.