2N4123 - Silicon NPN Transistor

Toshiba

Key Features

. Low Leakage Current : ICBO=50nA(Max. ) @ VCB=20V lEBO=50nA(Max. ) @ V£B=3V . Low Saturation Voltage : VC E(sat)=0.3V(Max. ) @ Ic=50mA, lB=5mA . Low Collector Output Capacitance.
Cob=4pF(Max. ) @ VcB=5V . Complementary to 2N4125.

2N4123 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2N4123
Manufacturer	Toshiba
File Size	55.03 KB
Description	Silicon NPN Transistor
Datasheet	2N4123 Datasheet

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Other Datasheets by Toshiba

Part Number	Description
2N4124	Silicon NPN Transistor
2N4125	Silicon PNP Transistor
2N4126	Silicon PNP Transistor
2N4398	SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR
2N4399	SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2N4123 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES . Low Leakage Current : ICBO=50nA(Max.) @ VCB=20V lEBO=50nA(Max.) @ V£B=3V . Low Saturation Voltage : VC E(sat)=0.3V(Max.) @ Ic=50mA, lB=5mA . Low Collector Output Capacitance •• Cob=4pF(Max.) @ VcB=5V . Complementary to 2N4125 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO 40 Collector-Emitter Voltage VCEO 30 Emitter-Base Voltage Collector Current VEBO 5 ic 200 Base Current IB 50 Collector Power Dissipation 350 (Ta=25°C) Derate Linearly 25°C PC 2.