Datasheet Summary
:
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS.
Features
. Low Leakage Current
: ICBO=50nA(Max.) @ VCB=20V lEBO=50nA(Max.) @ V£B=3V
. Low Saturation Voltage : VC E(sat)=0.3V(Max.) @ Ic=50mA, lB=5mA
. Low Collector Output Capacitance
- - Cob=4pF(Max.) @ VcB=5V
. plementary to 2N4125
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL
RATING
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage Collector Current
VEBO
5 ic
Base Current
Collector Power Dissipation
(Ta=25°C) Derate Linearly 25°C
Collector Power Dissipation
(Tc=25°C) Derate Linearly...
