2N4123 Description
SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2N4123 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS.
2N4123 Key Features
- 55^150
- In accordance with JEDEC registration data
- 2N4123
- MAX. 50 50
- Rg=lkQ, f = 10Hz~15.7kHz
- In accordance with JEDEC registration data