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2N4125 - Silicon PNP Transistor

Key Features

  • . Low Leakage Current : IcBO=-50nA(Max. ) @ VCB=-20V lEBO=-50nA(Max. ) @ Veb=~3V . Low Saturation Voltage : VcE(sat)=-O. AV(Max. ) @ I c=-50mA, lB=-5mA . Low Collector Output Capacitance : C b=4-5pF(Max. ) @ Vcb=-5V . Complementary to 2N4123.

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Datasheet Details

Part number 2N4125
Manufacturer Toshiba
File Size 54.36 KB
Description Silicon PNP Transistor
Datasheet download datasheet 2N4125 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON PNP EPITAXIAL TYPE (PGT PROCESS) 2N4125 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. Unit in mm FEATURES . Low Leakage Current : IcBO=-50nA(Max.) @ VCB=-20V lEBO=-50nA(Max.) @ Veb=~3V . Low Saturation Voltage : VcE(sat)=-O.AV(Max.) @ I c=-50mA, lB=-5mA . Low Collector Output Capacitance : C b=4-5pF(Max.) @ Vcb=-5V . Complementary to 2N4123 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Ta=25°C) Derate Linearly 25°C SYMBOL VCBO VCEO VEBO ic IB PC Collector Power Dissipation (Tc=25°C) Derate Linearly 25°C PC RATING -30 -30 -4 -200 -50 350 2.8 1.