Datasheet Summary
SILICON PNP EPITAXIAL TYPE (PGT PROCESS)
FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS.
Unit in mm
Features
. Low Leakage Current
: IcBO=-50nA(Max.) @ VCB=-20V lEBO=-50nA(Max.) @ Veb=~3V
. Low Saturation Voltage : VcE(sat)=-O.AV(Max.) @ I c=-50mA, lB=-5mA
. Low Collector Output Capacitance : C b=4-5pF(Max.) @ Vcb=-5V
. plementary to 2N4123
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Ta=25°C) Derate Linearly 25°C
SYMBOL VCBO VCEO VEBO ic IB
Collector Power Dissipation (Tc=25°C) Derate Linearly 25°C
RATING -30 -30 -4
-200 -50...
