2N4125
Overview
SILICON PNP EPITAXIAL TYPE (PGT PROCESS) 2N4125 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. Unit in mm FEATURES . Low Leakage Current : IcBO=-50nA(Max.) @ VCB=-20V lEBO=-50nA(Max...
- Part: 2N4125
- Description: Silicon PNP Transistor
- Category: Transistor
- Manufacturer: Toshiba
- Size: 54.36 KB