Datasheet Summary
t
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS.
Features
: . Low Leakage Current
: ICBO = 50nA(Max.) @ V C B=20V lEBO=50nA(Max.) @ V£B=3V
. Low Saturation Voltage : v CE(sat)=0.3V(Max.) @ I C =50mA, I B =5mA
. Low Collector Output Capacitance : C b=4pF(Max.) @ V C B=5V
. plementary to 2N4126
Unit in mm
H 5 I MAX
1- X <
Q46
C.5 6MAX.
0.4 5
1 1
,
-1
1.27 i.27
"I
X j'
< s
^i 2 3 / r~
- J
1. EMITTER 2. BASE 3. COLLECTOR
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power...
