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2N4124 - Silicon NPN Transistor

Key Features

  • . Low Leakage Current : ICBO = 50nA(Max. ) @ V C B=20V lEBO=50nA(Max. ) @ V£B=3V . Low Saturation Voltage : v CE(sat)=0.3V(Max. ) @ I C =50mA, I B =5mA . Low Collector Output Capacitance : C b=4pF(Max. ) @ V C B=5V . Complementary to 2N4126 Unit in mm H 5 I MAX 1.
  • X < Q46 C.5 6MAX. 1 J 0.4 5 1 1 , -1 CD 5 1.27 i.27 10 "I J 1 X j' 1 < s ^i 2 3 / r~.
  • J 1.

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Datasheet Details

Part number 2N4124
Manufacturer Toshiba
File Size 55.14 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2N4124 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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t SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2N4124 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : ICBO = 50nA(Max.) @ V C B=20V lEBO=50nA(Max.) @ V£B=3V . Low Saturation Voltage : v CE(sat)=0.3V(Max.) @ I C =50mA, I B =5mA . Low Collector Output Capacitance : C b=4pF(Max.) @ V C B=5V . Complementary to 2N4126 Unit in mm H 5 I MAX 1— X < Q46 C.5 6MAX. 1 J 0.4 5 1 1 , -1 CD 5 1.27 i.27 10 "I J 1 X j' 1 < s ^i 2 3 / r~ •J 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Ta=25°C) Derate Linearly 25°C SYMBOL VCBO VCEO VEBO ic IB PC RATING 30 25 5 200 50 350 2.