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2N4126 - Silicon PNP Transistor

Key Features

  • . Low Leakage Current : IcBO=-50nA(Max. ) @ VcB=-20V lEBO=-50nA(Max. ) @ Veb=-3V . Low Saturation Voltage.
  • ' vCE(sat)=-0-4V(Max. ) @ I C =-50mA, I B =-5mA . Low Collector Output Capacitance : C b=4.5pF(Max. ) @ v C B=-5V . Complementary to 2N4124.

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Datasheet Details

Part number 2N4126
Manufacturer Toshiba
File Size 55.09 KB
Description Silicon PNP Transistor
Datasheet download datasheet 2N4126 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2N4126 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. Unit in mm FEATURES . Low Leakage Current : IcBO=-50nA(Max.) @ VcB=-20V lEBO=-50nA(Max.) @ Veb=-3V . Low Saturation Voltage •' vCE(sat)=-0-4V(Max.) @ I C =-50mA, I B =-5mA . Low Collector Output Capacitance : C b=4.5pF(Max.) @ v C B=-5V . Complementary to 2N4124 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage SYMBOL VCBO RATING -25 Collector-Emitter Voltage Emitter-Base Voltage VCEO -25 VEBO -4 Collector Current ic -200 Base Current IB -50 Collector Power Dissipation 350 (Ta=25°C) Derate Linearly 25°C PC 2.8 Collector Power Dissipation 1.