Datasheet Summary
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS.
Unit in mm
Features
. Low Leakage Current
: IcBO=-50nA(Max.) @ VcB=-20V lEBO=-50nA(Max.) @ Veb=-3V
. Low Saturation Voltage
- ' vCE(sat)=-0-4V(Max.) @ I C =-50mA, I B =-5mA
. Low Collector Output Capacitance : C b=4.5pF(Max.) @ v C B=-5V
. plementary to 2N4124
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage
SYMBOL VCBO
RATING -25
Collector-Emitter Voltage Emitter-Base Voltage
VCEO
-25
VEBO
-4
Collector Current ic
-200
Base Current
-50
Collector Power Dissipation
(Ta=25°C) Derate Linearly 25°C
Collector Power...
