2N6050 Datasheet | Central Semiconductor

DESCRIPTION : The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are plementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switching applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N6050 2N6057 2N6051 2N6058 80 80 5.0 12 20 0.2 150 -65 to +200 1.17 2N6052 2N6059 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS ICEV VCE=Rated VCEO, VEB=1.5V ICEV VCE=Rated VCEO, VEB=1.5V, TC=150°C ICEO VCE=½Rated VCEO IEBO VEB=5.0V BVCEO IC=100m A, (2N6050, 2N6057) BVCEO IC=100m A, (2N6051, 2N6058) BVCEO IC=100m A, (2N6052, 2N6059) VCE(SAT) IC=6.0A, IB=24m A VCE(SAT) IC=12A, IB=120m A VBE(SAT) IC=12A, IB=120m...