2N6050 - COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

Description

The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switching applications.

Central Semiconductor

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Datasheet Details

Part number	2N6050
Manufacturer	Central Semiconductor
File Size	257.33 KB
Description	COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
Datasheet	2N6050 Datasheet
Additional preview pages of the 2N6050 datasheet.

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Other Datasheets by Central Semiconductor

2N6051 - COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
2N6052 - COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
2N6053 - COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
2N6054 - COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
2N6055 - COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
2N6056 - COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
2N6057 - COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
2N6058 - COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

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2N6050 2N6051 2N6052 PNP 2N6057 2N6058 2N6059 NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switching applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N6050 2N6057 60 60 2N6051 2N6058 80 80 5.0 12 20 0.2 150 -65 to +200 1.

Published: Mar 27, 2016 |