Datasheet4U Logo Datasheet4U.com

2N6050 - Silicon PNP Power Transistors

General Description

Built-in Base-Emitter Shunt Resistors High DC current gain Complement to type 2N6057 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2N6050 Bipolar PNP Device Seme LAB
2N6050 POWER COMPLEMENTARY SILICON TRANSISTORS Comset Semiconductors
2N6050 COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS Central Semiconductor
2N6050 Power Transistor Solid State
2N6051 PNP Darlington Power Silicon Transistor VPT

Other Datasheets by Inchange Semiconductor

Part Number Description
2N6051 Silicon PNP Power Transistors
2N6052 Silicon PNP Power Transistors
2N6057 Silicon NPN Power Transistors
2N6040 Silicon PNP Power Transistors
2N6041 Silicon PNP Power Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2N6050 DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain ·Complement to type 2N6057 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -12 A ICM Collector Current-Peak -20 A IB Base Current -0.