2N6057 - Silicon NPN Power Transistors

Inchange Semiconductor

General Description

Built-in Base-Emitter Shunt Resistors High DC current gain- hFE = 750 (Min) @ IC = 6A Collector-Emitter Sustaining Voltage- VCEO(SUS)= 60V(Min) Complement to type 2N6050 APPLICATIONS

switching applications.

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2N6057 silicon npn power transistors by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2N6057
Manufacturer	Inchange Semiconductor
File Size	139.42 KB
Description	Silicon NPN Power Transistors
Datasheet	2N6057 Datasheet

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor 2N6057 DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 750 (Min) @ IC = 6A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 60V(Min) ·Complement to type 2N6050 APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 12 A ICM Collector Current-Peak 20 A IB Base Current 0.