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2N6057 Datasheet Silicon NPN Power Transistors

Manufacturer: Inchange Semiconductor

Overview: INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor.

General Description

·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 750 (Min) @ IC = 6A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 60V(Min) ·Complement to type 2N6050 APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications.

ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 12 A ICM Collector Current-Peak 20 A IB Base Current 0.2 A PC Collector Power Dissipation@TC=25℃ 150 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.17 UNIT ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor isc Product Specification 2N6057 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;

IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A;

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