2N6057 - Silicon NPN Power Transistors

Product Overview

Inchange Semiconductor

Datasheet Details

Part number	2N6057
Manufacturer	Inchange Semiconductor
File Size	139.42 KB
Description	Silicon NPN Power Transistors
Datasheet	2N6057 Datasheet
Additional preview pages of the 2N6057 datasheet.

Product details

Description

Built-in Base-Emitter Shunt Resistors High DC current gain- hFE = 750 (Min) @ IC = 6A Collector-Emitter Sustaining Voltage- VCEO(SUS)= 60V(Min) Complement to type 2N6050 APPLICATIONS Designed for general purpose amplifier and low frequency switching applications.ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous

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Published: Oct 14, 2016 |