| Part number | 2N6057 |
|---|---|
| Download | 2N6057 Datasheet (PDF) |
| File Size | 139.42 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistors |
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| Manufacturer | Part Number | Description |
|---|---|---|
Seme LAB |
2N6057 | Bipolar NPN Device |
Comset Semiconductors |
2N6057 | POWER COMPLEMENTARY Silicon TRANSISTORS |
NTE Electronics (defunct) |
2N6057 | Silicon NPN Transistor |
Central Semiconductor |
2N6057 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
| Solid State Solid State |
2N6057 | Power Transistor |
·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 750 (Min) @ IC = 6A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 60V(Min) ·plement to type 2N6050 APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications. 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor isc Product Specification 2N6057 TC=25℃...
