STMicroelectronics 2N6059
The 2N6059 is a silicon epitaxial-base NPN transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case. It is inteded for use in power linear and low frequency switching applications.| Part No. | 2N6059 |
|---|---|
| Datasheet | 2N6059 Download |
| Manufacturer |  STMicroelectronics |
| Description | SILICON NPN POWER DARLINGTON TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENTDESCRIPTION
1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 6 KΩ R2 Typ. = 55 ΩABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEX V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (V BE = -1.5V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c ≤ 25 C Storage Temperature Max. Operating Junction Temperature o Value 100 100 100 5 12 20 0.2 150 -65 to 200 200 Unit V V V V A A A W o o C C For PNP types voltage and current values are negative. June 1997 1/4 2N6059 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.17 o C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol I CEX I CEO I EBO Parameter Collector Cut-off Current (V BE = -1.5V) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = rated V CEX V CE = rate...
