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2N6059 Silicon NPN Power Darlington Transistor
TO−3 Type Case
Description:
The 2N6059 is a silicon NPN Darlington transistor in a TO−3 type case designed for general−purpose amplifier and low−frequency switching applications.
Absolute Maximum Ratings:
Collector−Base Voltage (IE = 0), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector−Emitter Voltage (VBE = −1.5V), VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter−Base Voltage (IC = 0), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .