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2N6057 - Silicon NPN Transistor

General Description

The 2N6057 is a silicon NPN Darlington transistor in a TO 3 type case designed for general purpose amplifier and low

frequency switching applications.

Key Features

  • D High DC Current Gain: hFE = 3500 Typ @ IC = 5A Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . . 60V Collector.
  • Base Voltage, VCBO.
  • 60V Emitter.
  • Base Voltage, VEBO.
  • .

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Datasheet Details

Part number 2N6057
Manufacturer NTE Electronics (defunct)
File Size 65.31 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2N6057 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N6057 Silicon NPN Transistor Darlington Power Amplifier TO−3 Type Package Description: The 2N6057 is a silicon NPN Darlington transistor in a TO−3 type case designed for general−purpose amplifier and low−frequency switching applications. Features: D High DC Current Gain: hFE = 3500 Typ @ IC = 5A Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, Continuous IC. .