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2N6052 - Silicon PNP Transistor

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NTE

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2N6052 Silicon PNP Transistor by NTE - Datasheet Preview — Datasheet preview – 2N6052

Datasheet Details

Part number	2N6052
Manufacturer	NTE
File Size	65.35 KB
Description	Silicon PNP Transistor
Datasheet	2N6052 Datasheet
Additional preview pages of the 2N6052 datasheet.

Product details

Description

The 2N6052 is a silicon PNP Darlington transistor in a TO 3 type case designed for general purpose amplifier and low frequency switching applications.

Features

D High DC Current Gain: hFE = 3500 Typ @ IC = 5A D Collector.
Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA D Monolithic Construction with Built.
In Base.
Emitter Shunt Resistors Absolute Maximum Ratings: Collector.
Emitter Voltage, VCEO.
. . . 100V Collector.
Base Voltage, VCB.

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Published: Jul 5, 2020 |