2N6052 Datasheet Text
2N6051 & 2N6052
PNP Darlington Power Silicon Transistors
Features
- Available in JAN, JANTX, JANTXV per MIL-PRF-19500/501
- TO-3 (TO-204AA) Package
- Ideal for High Gain Amplifier and Switching Applications
Rev. V3
Electrical Characteristics (TA = +25oC unless otherwise noted)
Parameter
Test Conditions
Symbol Units Min. Max.
Collector
- Emitter Breakdown Voltage
IC = -10 mA dc, 2N6051 IC = -10 mA dc, 2N6052
V(BR)CEO V dc
-80 -100
- Collector
- Emitter Cutoff Current
VCE = -40 V dc, 2N6051 VCE = -50 V dc, 2N6052
ICEO mA dc
- -1
Collector
- Emitter Cutoff Current
VCE = -80 V dc, VBE = +1.5 V dc, 2N6051 VCE = -100 V dc, VBE = +1.5 V dc, 2N6052
ICEX1 mA dc
- -.01
Emitter
- Base Cutoff Current
VEB = -5 Vdc
IEBO mA dc...
