2N6051 - PNP Darlington Power Silicon Transistor

VPT

Key Features

Available in JAN, JANTX, JANTXV per MIL-PRF-19500/501.
TO-3 (TO-204AA) Package.
Ideal for High Gain Amplifier and Switching.

2N6051 pnp darlington power silicon transistor by VPT - Datasheet Preview

Datasheet Details

Part number	2N6051
Manufacturer	VPT
File Size	634.93 KB
Description	PNP Darlington Power Silicon Transistor
Datasheet	2N6051 Datasheet

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Other Datasheets by VPT

Part Number	Description
2N6052	PNP Darlington Power Silicon Transistor
2N6058	NPN Darlington Power Silicon Transistor
2N6059	NPN Darlington Power Silicon Transistor
2N6032	NPN High Power Silicon Transistor
2N6033	NPN High Power Silicon Transistor

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2N6051 & 2N6052 PNP Darlington Power Silicon Transistors Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/501 • TO-3 (TO-204AA) Package • Ideal for High Gain Amplifier and Switching Applications Rev. V3 Electrical Characteristics (TA = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage IC = -10 mA dc, 2N6051 IC = -10 mA dc, 2N6052 V(BR)CEO V dc -80 -100 — Collector - Emitter Cutoff Current VCE = -40 V dc, 2N6051 VCE = -50 V dc, 2N6052 ICEO mA dc — -1 Collector - Emitter Cutoff Current VCE = -80 V dc, VBE = +1.5 V dc, 2N6051 VCE = -100 V dc, VBE = +1.5 V dc, 2N6052 ICEX1 mA dc — -.