2N6059 Datasheet Text
2N6058 & 2N6059
NPN Darlington Power Silicon Transistors
Features
- Available in JAN, JANTX, JANTXV per MIL-PRF-19500/502
- TO-3 (TO-204AA) Package
- Designed for Use in High Gain Amplifier and Switching
Applications
Electrical Characteristics (TA = +25oC unless otherwise noted)
Parameter
Test Conditions
Symbol Units Min.
Rev. V3 Max.
Collector
- Emitter Breakdown Voltage
IC = 100 mA dc, 2N6058 IC = 100 mA dc, 2N6059
V(BR)CEO V dc
80 100
- Collector
- Emitter Cutoff Current Collector
- Emitter Cutoff Current
VCE = 40 V dc, 2N6058 VCE = 50 V dc, 2N6059
ICEO mA dc
- 1.0 1.0
VCE = 80 V dc; VBE = 1.5 V dc, 2N6058 VCE = 100 V dc; VBE = 1.5 V dc, 2N6059
ICEX1 µA dc
- 10 10
Collector
- Base Cutoff Current
VEB = 5 Vdc
IEBO mA dc...
