VPT 2N6059
NPN Darlington Power Silicon Transistor
| Part No. | 2N6059 |
|---|---|
| Datasheet | 2N6059 Download |
| Manufacturer |  VPT |
| Description | NPN Darlington Power Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● Available in JAN, JANTX, JANTXV per MIL-PRF-19500/502● TO-3 (TO-204AA) Package
● Designed for Use in High Gain Amplifier and Switching
APPLICATIONS
ELECTRICAL CHARACTERISTICS
(TA = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Rev. V3 Max. Collector - Emitter Breakdown Voltage IC = 100 mA dc, 2N6058 IC = 100 mA dc, 2N6059 V(BR)CEO V dc 80 100 — Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current VCE = 40 V dc, 2N6058 VCE = 50 V dc, 2N6059 ICEO mA dc — 1.0 1.0 VCE = 80 V dc; VBE = 1.5 V dc, 2N6058 VCE = 100 V dc; VBE = 1.5 V dc, 2N6059 ICEX1 µA dc — 10 10 Collector - Base Cutoff Current VEB = 5 Vdc IEBO mA dc — 2.0 Forward Current Transfer Ratio Collector - Emitter Saturation Voltage Base - Emitter Voltage IC = 1 A dc; VCE = 3 V dc IC = 6 A dc; VCE = 3 V dc IC = 12 A dc; VCE = 3 V dc IC = 12 A dc; IB = 120 mA dc IC = 6 A dc; IB = 24 mA dc IC = 12 A dc; IB = 120 mA dc hFE - VCE(sat)1 VCE(sat)2 VBE(SAT) Vdc Vdc 1,000 1,000 150 — —...
