2N6059 - NPN Darlington Power Silicon Transistor

VPT

Download the 2N6059 datasheet PDF. This datasheet also covers the 2N6058 variant, as both devices belong to the same npn darlington power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

Available in JAN, JANTX, JANTXV per MIL-PRF-19500/502.
TO-3 (TO-204AA) Package.
Designed for Use in High Gain Amplifier and Switching.

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2N6059 npn darlington power silicon transistor by VPT - Datasheet Preview — Note: The manufacturer provides a single datasheet file (2N6058-VPT.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	2N6059
Manufacturer	VPT
File Size	405.63 KB
Description	NPN Darlington Power Silicon Transistor
Datasheet	2N6059 Datasheet

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Other Datasheets by VPT

Part Number	Description
2N6051	PNP Darlington Power Silicon Transistor
2N6052	PNP Darlington Power Silicon Transistor
2N6058	NPN Darlington Power Silicon Transistor
2N6032	NPN High Power Silicon Transistor
2N6033	NPN High Power Silicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

2N6058 & 2N6059 NPN Darlington Power Silicon Transistors Features • Available in JAN, JANTX, JANTXV per MIL-PRF-19500/502 • TO-3 (TO-204AA) Package • Designed for Use in High Gain Amplifier and Switching Applications Electrical Characteristics (TA = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Rev. V3 Max. Collector - Emitter Breakdown Voltage IC = 100 mA dc, 2N6058 IC = 100 mA dc, 2N6059 V(BR)CEO V dc 80 100 — Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current VCE = 40 V dc, 2N6058 VCE = 50 V dc, 2N6059 ICEO mA dc — 1.0 1.0 VCE = 80 V dc; VBE = 1.5 V dc, 2N6058 VCE = 100 V dc; VBE = 1.5 V dc, 2N6059 ICEX1 µA dc — 10 10 Collector - Base Cutoff Current VEB = 5 Vdc IEBO mA dc — 2.