| Part number | 2N6051 |
|---|---|
| Download | 2N6051 Datasheet (PDF) |
| File Size | 139.15 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon PNP Power Transistors |
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| Manufacturer | Part Number | Description |
|---|---|---|
VPT Components |
2N6051 | PNP Darlington Power Silicon Transistor |
Microsemi |
2N6051 | PNP DARLINGTON POWER SILICON TRANSISTOR |
Comset Semiconductors |
2N6051 | POWER COMPLEMENTARY SILICON TRANSISTORS |
Central Semiconductor |
2N6051 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 750 (Min) @ IC = -6A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= -80V(Min) ·plement to type 2N6058 APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications. 1 isc & iscsemi is registered trademark INCHANGE Semiconductor.
