2N6051
Description
Built-in Base-Emitter Shunt Resistors High DC current gain- hFE = 750 (Min) @ IC = -6A Collector-Emitter Sustaining Voltage- VCEO(SUS)= -80V(Min) Complement to type 2N6058.
- Part: 2N6051
- Description: Silicon PNP Power Transistors
- Category: Transistor
- Manufacturer: Inchange Semiconductor
- Size: 139.15 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| 2N6051 | Solid State | Power Transistor |
| 2N6052 | Motorola Semiconductor | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
| 2N6058 | Motorola Semiconductor | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
| 2N6050 | Seme LAB | Bipolar PNP Device |
| 2N6053 | Seme LAB | Bipolar PNP Device |
| 2N6055 | Seme LAB | Bipolar NPN Device |
| 2N6056 | Inchange Semiconductor | NPN Transistor |
| 2N6059 | TT Electronics | SILICON MULTI-EPITAXIAL NPN TRANSISTOR |
| 2N6058 | VPT Components | NPN Darlington Power Silicon Transistor |
| 2N6059 | Motorola Semiconductor | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |