2N6051 - Silicon PNP Power Transistors

Inchange Semiconductor

General Description

Built-in Base-Emitter Shunt Resistors High DC current gain- hFE = 750 (Min) @ IC = -6A Collector-Emitter Sustaining Voltage- VCEO(SUS)= -80V(Min) Complement to type 2N6058 APPLICATIONS

switching applications.

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Datasheet Details

Part number	2N6051
Manufacturer	Inchange Semiconductor
File Size	139.15 KB
Description	Silicon PNP Power Transistors
Datasheet	2N6051 Datasheet

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INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor isc Product Specification 2N6051 DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 750 (Min) @ IC = -6A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= -80V(Min) ·Complement to type 2N6058 APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -12 A ICM Collector Current-Peak -20 A IB Base Current -0.