Datasheet Details
| Part number | 2N6051 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 139.15 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet | 2N6051-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor isc Product.
| Part number | 2N6051 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 139.15 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet | 2N6051-InchangeSemiconductor.pdf |
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·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 750 (Min) @ IC = -6A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= -80V(Min) ·Complement to type 2N6058 APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -12 A ICM Collector Current-Peak -20 A IB Base Current -0.2 A PC Collector Power Dissipation@TC=25℃ 150 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c ThermalResistance, Junction to Case MAX 1.17 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor is
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N6051 | PNP Darlington Power Silicon Transistor | VPT |
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2N6051 | PNP DARLINGTON POWER SILICON TRANSISTOR | Microsemi Corporation |
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2N6051 | POWER COMPLEMENTARY SILICON TRANSISTORS | Comset Semiconductors |
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2N6051 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS | Central Semiconductor |
| Part Number | Description |
|---|---|
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