2N6059 - SILICON MULTI-EPITAXIAL NPN TRANSISTOR

TT Electronics

Datasheet Details

Part number	2N6059
Manufacturer	TT Electronics
File Size	180.44 KB
Description	SILICON MULTI-EPITAXIAL NPN TRANSISTOR
Datasheet	2N6059 Datasheet

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SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6059 • High Current Capability. • Hermetic TO3 Metal package. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 100V VCEO Collector – Emitter Voltage 100V VEBO Emitter – Base Voltage 5V IC Continuous Collector Current 12A IB Base Current 0.2A PD Total Power Dissipation at TC = 25°C 150W Derate Above 25°C 1.00W/°C TJ Junction Temperature Range -55 to +175°C Tstg Storage Temperature Range -55 to +175°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Min. Typ. Max. Units 1.00 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.