TT 2N6059
SILICON MULTI-EPITAXIAL NPN TRANSISTOR
| Part No. | 2N6059 |
|---|---|
| Datasheet | 2N6059 Download |
| Manufacturer |  TT |
| Description | SILICON MULTI-EPITAXIAL NPN TRANSISTOR |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage 100V VCEO Collector – Emitter Voltage 100V VEBO Emitter – Base Voltage 5V IC Continuous Collector Current 12A IB Base Current 0.2A PD Total Power Dissipation at TC = 25°C 150W Derate Above 25°C 1.00W/°C TJ Junction Temperature Range -55 to +175°C Tstg Storage Temperature Range -55 to +175°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Min. Typ. Max. Units 1.00 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 5565...
