Datasheet Details
| Part number | 2N6052 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.67 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet | 2N6052-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor.
| Part number | 2N6052 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 184.67 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet | 2N6052-InchangeSemiconductor.pdf |
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·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 750 (Min) @ IC = -6A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= -100V(Min) ·Complement to type 2N6059 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO IC ICM Emitter-Base Voltage Collector Current -Continuous Collector Current-Peak -5 V -12 A -20 A IB Base Current -0.2 A PC Collector Power Dissipation@TC=25℃ 150 W TJ Junction Temperature Tstg Storage Temperature 200 ℃ -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c ThermalResistance, Junction to Case MAX 1.17 UNIT ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2N6052 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ;
IB= 0 -100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -6A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| 2N6052 | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR | ON Semiconductor | |
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2N6052 | PNP Darlington Power Silicon Transistor | VPT |
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2N6052 | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS | Motorola |
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2N6052 | PNP DARLINGTON POWER SILICON TRANSISTOR | Microsemi Corporation |
| 2N6052 | POWER COMPLEMENTARY SILICON TRANSISTORS | Comset Semiconductors |
| Part Number | Description |
|---|---|
| 2N6050 | Silicon PNP Power Transistors |
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| 2N6040 | Silicon PNP Power Transistors |
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| 2N6211 | Silicon PNP Power Transistors |
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| 2N6235 | Silicon NPN Power Transistor |