2N6052 Datasheet (PDF) Download
Inchange Semiconductor
2N6052

Description

Built-in Base-Emitter Shunt Resistors - High DC current gain- hFE = 750 (Min) @ IC = -6A - Collector-Emitter Sustaining Voltage- VCEO(SUS)= -100V(Min) - plement to type 2N6059 - Minimum Lot-to-Lot variations for robust device performance and reliable operation.