Datasheet4U Logo Datasheet4U.com

2N6052 - Silicon PNP Power Transistors

General Description

Built-in Base-Emitter Shunt Resistors High DC current gain- hFE = 750 (Min) @ IC = -6A Collector-Emitter Sustaining Voltage- VCEO(SUS)= -100V(Min) Complement to type 2N6059 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2N6052 DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR ON Semiconductor
2N6052 PNP Darlington Power Silicon Transistor VPT
2N6052 DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS Motorola
2N6052 PNP DARLINGTON POWER SILICON TRANSISTOR Microsemi Corporation
2N6052 POWER COMPLEMENTARY SILICON TRANSISTORS Comset Semiconductors

Other Datasheets by Inchange Semiconductor

Part Number Description
2N6050 Silicon PNP Power Transistors
2N6051 Silicon PNP Power Transistors
2N6057 Silicon NPN Power Transistors
2N6040 Silicon PNP Power Transistors
2N6041 Silicon PNP Power Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2N6052 DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 750 (Min) @ IC = -6A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= -100V(Min) ·Complement to type 2N6059 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO IC ICM Emitter-Base Voltage Collector Current -Continuous Collector Current-Peak -5 V -12 A -20 A IB Base Current -0.