2N6052 - Silicon PNP Power Transistors

Product Overview

Inchange Semiconductor

Datasheet Details

Part number	2N6052
Manufacturer	Inchange Semiconductor
File Size	184.67 KB
Description	Silicon PNP Power Transistors
Datasheet	2N6052 Datasheet
Additional preview pages of the 2N6052 datasheet.

Product details

Description

Built-in Base-Emitter Shunt Resistors High DC current gain- hFE = 750 (Min) @ IC = -6A Collector-Emitter Sustaining Voltage- VCEO(SUS)= -100V(Min) Complement to type 2N6059 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching applications.ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector

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Published: Oct 14, 2016 |