Inchange Semiconductor 2N6056
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2N6056 |
|---|---|
| Datasheet | 2N6056 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Built-in Base-Emitter Shunt Resistors●Low Collector-Emitter Saturation Voltage- : VCE (sat)= 2.0V(Max.)@IC= 4.0A
●Collector-Emitter Sustaining Voltage- VCEO(SUS)= 80V(Min)
●Complement to type 2N6054
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for general purpose amplifier and low frequency switching applications.ABSOLUTE MAXIMUM RATINGS
(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 8 A ICM Collector Current-Peak 16 A IB Base Current 120 mA PC Collector Power Dissipation@TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.75 ℃/W isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Darlingtion Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless othe...