2N6056 - NPN Transistor

Inchange Semiconductor

General Description

Built-in Base-Emitter Shunt Resistors Low Collector-Emitter Saturation Voltage- : VCE (sat)= 2.0V(Max.)@IC= 4.0A Collector-Emitter Sustaining Voltage- VCEO(SUS)= 80V(Min) Complement to type 2N6054 Minimum Lot-to-Lot variations for robust device performance and reliable opera

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2N6056 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2N6056
Manufacturer	Inchange Semiconductor
File Size	190.93 KB
Description	NPN Transistor
Datasheet	2N6056 Datasheet

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INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2N6056 DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·Low Collector-Emitter Saturation Voltage- : VCE (sat)= 2.0V(Max.)@IC= 4.0A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 80V(Min) ·Complement to type 2N6054 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications.