SavantIC 2N6056
Silicon Power Transistor
DESCRIPTION
●With TO-3 package●Low collector saturation voltage
●DARLINGTON
●Complement to type 2N6053;2N6054
APPLICATIONS
●General-purpose power amplifier and low frequency swithing applications PINNING PIN 1 2 3 Base Emitter CollectorDESCRIPTION
2N6055 2N6056 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL VCBO PARAMETER Collector-base voltage 2N6055 2N6056 2N6055 2N6056 CONDITIONS Open emitter VALUE 60 80 60 80 5 8 16 120 TC=25 100 200 -65~200 UNIT V VCEO VEBO IC ICM IB PD Tj Tstg Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature Open base Open collector V V A A mA W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.75 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tm=25 unless otherwise specified PARAMETER 2N6055 IC=0.1 A ;IB=0 2N6056 IC=4A...