Datasheet4U Logo Datasheet4U.com

2N6054 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor.

General Description

·Built-in Base-Emitter Shunt Resistors ·Low Collector-Emitter Saturation Voltage : VCE(sat) = -2.0V(Max)@ IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -80V(Min) ·Complement to type 2N6056 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications.

ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -8 A ICM Collector Current-Peak -16 A IB Base Current -120 mA PC Collector Power Dissipation@TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c ThermalResistance, Junction to Case MAX 1.75 UNIT ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlingtion Power Transistor 2N6054 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ;

IB= 0 -80 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -4A;

2N6054 Distributor