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2N6054 - PNP Transistor

General Description

Built-in Base-Emitter Shunt Resistors Low Collector-Emitter Saturation Voltage : VCE(sat) = -2.0V(Max)@ IC= -4A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -80V(Min) Complement to type 2N6056 Minimum Lot-to-Lot variations for robust device performance and reliable op

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INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2N6054 DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·Low Collector-Emitter Saturation Voltage : VCE(sat) = -2.0V(Max)@ IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -80V(Min) ·Complement to type 2N6056 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications.