Datasheet Summary
ON Semiconductort
NPN Darlington Silicon Power Transistor
. . . designed for general- purpose amplifier and low frequency switching applications.
ON Semiconductor Preferred Device
- High DC Current Gain
- hFE = 3000 (Typ) @ IC = 4.0 Adc
- Collector- Emitter Sustaining Voltage
- @ 100 mA VCEO(sus) = 80 Vdc (Min) ..
- Low Collector- Emitter Saturation Voltage
- VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc = 3.0 Vdc (Max) @ IC = 8.0 Adc
- Monolithic Construction with Built- In Base- Emitter Shunt Resistors
MAXIMUM RATINGS (1)
Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Rating Symbol VCEO VCB VEB IC IB Max 80 80
DARLINGTON 8 AMPERE SILICON POWER...
