2N6052 Datasheet Text
2N6052
Preferred Device
Darlington plementary Silicon Power Transistors
This package is designed for general- purpose amplifier and low frequency switching applications.
Features
- High DC Current Gain
- hFE = 3500 (Typ) @ IC = 5.0 Adc
- Collector- Emitter Sustaining Voltage
- @ 100 mA
VCEO(sus) = 100 Vdc (Min)
- Monolithic Construction with Built- In Base- Emitter Shunt Resistors
- This is a Pb- Free Device-
MAXIMUM RATINGS (Note 1)
Rating
Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current
- Continuous
Peak
Base Current Total Power Dissipation @ TC = 25°C Derate above 25°C
Operating and Storage Temperature Range
Symbol VCEO VCB VEB
IC
IB PD
TJ, Tstg
Value
100 100 5.0 12 20
0.2 150 0.857
- 65 to + 200
Unit Vdc Vdc Vdc Adc
Adc W W/°C °C
THERMAL CHARACTERISTICS...
