• Part: 2N6052
  • Description: DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR
  • Manufacturer: onsemi
  • Size: 132.01 KB
Download 2N6052 Datasheet PDF
2N6052 page 2
Page 2
2N6052 page 3
Page 3

2N6052 Key Features

  • High DC Current Gain
  • hFE = 3500 (Typ) @ IC = 5.0 Adc
  • Collector-Emitter Sustaining Voltage
  • @ 100 mA
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors
  • This is a Pb-Free Device
  • Continuous
  • 65 to + 200
  • For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering
  • Rev. 5