2N6052 - DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR

onsemi

Key Features

High DC Current Gain.
hFE = 3500 (Typ) @ IC = 5.0 Adc.
Collector.
Emitter Sustaining Voltage.
@ 100 mA VCEO(sus) = 100 Vdc (Min).
Monolithic Construction with Built.
In Base.
Emitter Shunt Resistors.
This is a Pb.
Free Device.

2N6052 darlington complementary silicon power transistor by onsemi - Datasheet Preview

Datasheet Details

Part number	2N6052
Manufacturer	onsemi
File Size	132.01 KB
Description	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR
Datasheet	2N6052 Datasheet

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Full PDF Text Transcription (Reference)

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2N6052 Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain — hFE = 3500 (Typ) @ IC = 5.0 Adc • Collector−Emitter Sustaining Voltage — @ 100 mA VCEO(sus) = 100 Vdc (Min) • Monolithic Construction with Built−In Base−Emitter Shunt Resistors • This is a Pb−Free Device* MAXIMUM RATINGS (Note 1) Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Peak Base Current Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VCEO VCB VEB IC IB PD TJ, Tstg Value 100 100 5.0 12 20 0.2 150 0.